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PD - 91402A
IRFR/U5305
HEXFET ? Power MOSFET
l
Ultra Low On-Resistance
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l
l
l
l
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
D
V DSS = -55V
R DS(on) = 0.065 ?
I D = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET ? Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
D-Pak
IRFR5305
Max.
I-Pak
IRFU5305
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V
-31
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
-22
-110
110
0.71
± 20
280
-16
11
-5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.4
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
–––
–––
50
110
°C/W
10/23/00
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IRFR540ZTRLPBF 功能描述:MOSFET 100V SINGLE N-CH 28.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IRFR540ZTRRPBF 功能描述:MOSFET 100V SINGLE N-CH 28.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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